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RJL6014DPP - Silicon N Channel MOS FET

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Description

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Features

  • Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C).
  • Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011 Outline.

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Datasheet Details

Part number RJL6014DPP
Manufacturer Renesas Technology
File Size 139.36 KB
Description Silicon N Channel MOS FET
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Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)  Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.
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