RJL6014DPP fet equivalent, silicon n channel mos fet.
* Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
* Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, .
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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