RJL6014DPP Description
Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching.
RJL6014DPP Key Features
- Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
- Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching